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HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Typical Applications
The HMC659 is ideal for: * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation * Fiber Optics
Features
P1dB Output Power: +26.5 dBm Gain: 19 dB Output IP3: +35 dBm Supply Voltage: +8V @ 300 mA 50 Ohm Matched Input/Output Die Size: 3.115 x 1.630 x 0.1 mm
Functional Diagram
General Description
The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at 0.5 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifi cations, TA = +25 C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 23 16.1 Min. Typ. DC - 6 19.1 0.5 0.013 19 18 25.5 26 35 2.5 300 24 15.5 Max. Min. Typ. 6 - 11 18.5 0.15 0.018 17 17 26.5 27 32 2 300 22.5 14.8 Max. Min. Typ. 11 - 15 17.8 0.6 0.025 15 15 25 27 29 3 300 Max. Units GHz dB dB dB/ C dB dB dBm dBm dBm dBc mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
Gain & Return Loss
20 15 RESPONSE (dB) 10 GAIN (dB) 5 0 -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 FREQUENCY (GHz)
S21 S11 S22
Gain vs. Temperature
24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 FREQUENCY (GHz)
+25C +85C -55C
3
LINEAR & POWER AMPLIFIERS - CHIP
3 - 123
Input Return Loss vs. Temperature
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 0 1 2 3 4 5 6 7 8
+25C +85C -55C
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40
+25C +85C -55C
RETURN LOSS (dB)
9 10 11 12 13 14 15 16 17
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 -10
Noise Figure vs. Temperature
7 6 NOISE FIGURE (dB)
ISOLATION (dB)
-20 -30 -40 -50 -60 0 2 4 6
+25C +85C -55C
5 4 3 2 1 0
+25C +85C -55C
8
10
12
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
P1dB vs. Frequency
32 30 28 26 24
+25C
Psat vs. Temperature
32 30 28 26 24 22 20
P1dB (dBm)
Psat (dBm)
22 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz)
+25C +85C -55C
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
FREQUENCY (GHz)
Output IP3 vs. Temperature
45
+25C +85C -55C
Output IP3 vs. Output Power @ 7GHz
50
40
45 IP3 (dBm)
7.5V 8.0V 8.5V
IP3 (dBm)
35
40
30
35 25
20 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz)
30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 OUTPUT POWER (dBm)
Gain, Power & Output IP3 vs. Supply Voltage @ 10 GHz, Fixed Vgg
40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 7.5 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Gain P1dB
Psat IP3
8 Vdd (V)
8.5
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
Power Compression @ 2 GHz
32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm)
Pout Gain PAE
Power Compression @ 7 GHz
32 28 24 20 16 12 8 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm)
Pout Gain PAE
3
LINEAR & POWER AMPLIFIERS - CHIP
3 - 125
Power Compression @ 15 GHz
32 Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm)
Pout Gain PAE
Power Dissipation
10 9.5 9 8.5 8 7.5 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -10 -8
POWER DISSIPATION (W)
Pout (dBm), GAIN (dB), PAE (%)
Max Pdis @ 85C 2 GHz 12 GHz
-6
-4
-2
0
2
4
6
8
10
12 14
16
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) RF Input Power (RFIN)(Vdd = +12V) Channel Temperature Continuous Pdiss (T= 85 C) (derate 41 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +9 Vdc 0 to -2 Vdc +2V to +4V +20 dBm 175 C 3.69 W 24.4 C/W -65 to 150C -55 to 85 C
Typical Supply Current vs. Vdd
Vdd (V) +7.5 +8.0 +8.5 Idd (mA) 299 300 301
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Outline Drawing
Die Packaging Information [1]
Standard GP-1 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS .002
3 - 126
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
3
This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required.
1
IN
2
Vgg2
Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3V should be applied to Vgg2.
3
ACG1
Low frequency termination. Attach bypass capacitor per application circuit herein.
4
ACG2
Low frequency termination. Attach bypass capacitor per application circuit herein.
5
OUT & Vdd
RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein. Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow "MMIC Amplifier Biasing Procedure" application note.
7
ACG3
6
Vgg1
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
3 - 127
LINEAR & POWER AMPLIFIERS - CHIP
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
3
LINEAR & POWER AMPLIFIERS - CHIP
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC659
v00.0807
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
3
LINEAR & POWER AMPLIFIERS - CHIP
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RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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